Exercise :: Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
1. | At room temperature the current in an intrinsic semiconductor is due to |
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Answer: Option D Explanation: Intrinsic material has equal number of holes and electrons. |
2. | Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface. |
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Answer: Option B Explanation: Work function is the minimum energy required by the fastest electron at 0 K to escape from the metal surface. |
3. | The most commonly used semiconductor material is |
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Answer: Option A Explanation: Germanium is rarely used. |
4. | In which of these is reverse recovery time nearly zero? |
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Answer: Option C Explanation: In schottky diode there is no charge storage and hence almost zero reverse recovery time. |
5. | A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is |
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Answer: Option A Explanation:
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