Exercise :: Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
| 46. | A p-n junction diode has |
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Answer: Option D Explanation: A p-n Junction has all these features. |
| 47. | Which of the following is true as regards photo emission? |
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Answer: Option C Explanation: As wavelength decreases, frequency increases and maximum velocity of electron increases. |
| 48. | The power dissipation in a transistor is the product of |
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Answer: Option C Explanation: Maximum power dissipation occurs at collector junction. |
| 49. | The normal operation of JFET is |
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Answer: Option B Explanation: In major portion of drain characteristics ID is constant. |
| 50. | The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm2/sec. The diffusion length is |
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Answer: Option A Explanation: Diffusion length = |
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