Exercise :: Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
| 1. | An incremental model of a solid state device is one which represents the |
|||||||
Answer: Option A Explanation: Incremental model is used for ac response at one operating point. |
| 2. | What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor?
|
|||||||
Answer: Option D Explanation: It is always non-linear. |
| 3. | For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will |
|||||||
Answer: Option A Explanation: VT depends upon MOSFET construction, hence it will Independent from MOSFET parameters. |
| 4. | Which of the following is used for generating time varying wave forms? |
|||||||
Answer: Option D Explanation: Its output is used to trigger SCR. |
| 5. | Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 1012 cm-3. Density of electrons = 8 x 1013 cm-3, mobility of conduction electron = 2.3 x 104 cm2/ V-sec and mobility of holes = 100 cm2/V-sec. |
|||||||
Answer: Option B Explanation: Resistivity(r) =
|
.
σ = e(neue + nnun).