Electronics and Communication Engineering - Electronic Devices and Circuits

1. 

A JFET operates in ohmic region when

A. VGS = 0
B. VGS is less than pinch off voltage
C. VGS = is Positive
D. VGS = VDS

Answer: Option B

Explanation:

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2. 

In CE connection, the leakage current of a transistor is about

A. 10 x 10-9 A
B. 5 x 10-6 A
C. 200 x 10-6 A
D. 5 x 10-3 A

Answer: Option C

Explanation:

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3. 

The early effect in a BJT is caused by

A. fast turn on
B. fast turn off
C. large collector base reverse bias
D. large emitter base forward bias

Answer: Option C

Explanation:

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4. 

In a common emitter BJT amplifier, the maximum usable supply voltage is limited by

A. avalanche Beakdown of Base-Emitter junction
B. collector emitter breakdown voltage with base open(βVCEO)
C. collector emitter breakdown voltage with emitter open(βVCEO)
D. zener break down voltage of the emitter base junction

Answer: Option C

Explanation:

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5. 

Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly constant.

Reason (R): Base current in CE connection is very small.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option A

Explanation:

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