Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise :: Electronic Devices and Circuits - Section 5
| 1. |
A JFET operates in ohmic region when |
| A. |
VGS = 0 | | B. |
VGS is less than pinch off voltage | | C. |
VGS = is Positive | | D. |
VGS = VDS |
Answer: Option B
Explanation:
|
| 2. |
In CE connection, the leakage current of a transistor is about |
| A. |
10 x 10-9 A | | B. |
5 x 10-6 A | | C. |
200 x 10-6 A | | D. |
5 x 10-3 A |
Answer: Option C
Explanation:
|
| 3. |
The early effect in a BJT is caused by |
| A. |
fast turn on | | B. |
fast turn off | | C. |
large collector base reverse bias | | D. |
large emitter base forward bias |
Answer: Option C
Explanation:
|
| 4. |
In a common emitter BJT amplifier, the maximum usable supply voltage is limited by |
| A. |
avalanche Beakdown of Base-Emitter junction | | B. |
collector emitter breakdown voltage with base open(βVCEO) | | C. |
collector emitter breakdown voltage with emitter open(βVCEO) | | D. |
zener break down voltage of the emitter base junction |
Answer: Option C
Explanation:
|
| 5. |
Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly constant.
Reason (R): Base current in CE connection is very small.
|
| A. |
Both A and R are true and R is correct explanation of A | | B. |
Both A and R are true but R is not a correct explanation of A | | C. |
A is true but R is false | | D. |
A is false but R is true |
Answer: Option A
Explanation:
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