Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise :: Electronic Devices and Circuits - Section 5
1. |
A JFET operates in ohmic region when |
A. |
VGS = 0 | B. |
VGS is less than pinch off voltage | C. |
VGS = is Positive | D. |
VGS = VDS |
Answer: Option B
Explanation:
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2. |
In CE connection, the leakage current of a transistor is about |
A. |
10 x 10-9 A | B. |
5 x 10-6 A | C. |
200 x 10-6 A | D. |
5 x 10-3 A |
Answer: Option C
Explanation:
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3. |
The early effect in a BJT is caused by |
A. |
fast turn on | B. |
fast turn off | C. |
large collector base reverse bias | D. |
large emitter base forward bias |
Answer: Option C
Explanation:
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4. |
In a common emitter BJT amplifier, the maximum usable supply voltage is limited by |
A. |
avalanche Beakdown of Base-Emitter junction | B. |
collector emitter breakdown voltage with base open(βVCEO) | C. |
collector emitter breakdown voltage with emitter open(βVCEO) | D. |
zener break down voltage of the emitter base junction |
Answer: Option C
Explanation:
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5. |
Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly constant.
Reason (R): Base current in CE connection is very small.
|
A. |
Both A and R are true and R is correct explanation of A | B. |
Both A and R are true but R is not a correct explanation of A | C. |
A is true but R is false | D. |
A is false but R is true |
Answer: Option A
Explanation:
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