Electronics and Communication Engineering - Electronic Devices and Circuits

1. 

Assertion (A): Hall effect is used to find the type of semiconductor.

Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option A

Explanation:

No answer description available for this question. Let us discuss.

2. 

The fT of a BJT is related to its gm, Cp and Cμ as follows.

A.
B.
C.
D.

Answer: Option D

Explanation:

No answer description available for this question. Let us discuss.

3. 

When a p-n junction is forward biased. The width of depletion layer decreases.

A. True
B. False

Answer: Option A

Explanation:

No answer description available for this question. Let us discuss.

4. 

In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?

A. Half wave rectifier
B. Full wave rectifier
C. Bridge type full wave rectifier
D. Three phase full wave rectifier

Answer: Option D

Explanation:

No answer description available for this question. Let us discuss.

5. 

When a p-n Junction is forward biased

A. the current flow is due to electrons only
B. the majority carriers in both p and n materials are driven toward the junction.
C. the majority carriers in both p and n materials are away from the junction.
D. both (a) and (c).

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.

1 2 3 4 5 6 7 8 9 10 Next »