Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise :: Electronic Devices and Circuits - Section 8
| 1. |
Assertion (A): Hall effect is used to find the type of semiconductor.
Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.
|
| A. |
Both A and R are true and R is correct explanation of A | | B. |
Both A and R are true but R is not a correct explanation of A | | C. |
A is true but R is false | | D. |
A is false but R is true |
Answer: Option A
Explanation:
|
| 2. |
The fT of a BJT is related to its gm, Cp and Cμ as follows. |
Answer: Option D
Explanation:
|
| 3. |
When a p-n junction is forward biased. The width of depletion layer decreases. |
Answer: Option A
Explanation:
|
| 4. |
In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least? |
| A. |
Half wave rectifier | | B. |
Full wave rectifier | | C. |
Bridge type full wave rectifier | | D. |
Three phase full wave rectifier |
Answer: Option D
Explanation:
|
| 5. |
When a p-n Junction is forward biased |
| A. |
the current flow is due to electrons only | | B. |
the majority carriers in both p and n materials are driven toward the junction. | | C. |
the majority carriers in both p and n materials are away from the junction. | | D. |
both (a) and (c). |
Answer: Option B
Explanation:
|
