Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise :: Electronic Devices and Circuits - Section 8
1. |
Assertion (A): Hall effect is used to find the type of semiconductor.
Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.
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A. |
Both A and R are true and R is correct explanation of A | B. |
Both A and R are true but R is not a correct explanation of A | C. |
A is true but R is false | D. |
A is false but R is true |
Answer: Option A
Explanation:
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2. |
The fT of a BJT is related to its gm, Cp and Cμ as follows. |
Answer: Option D
Explanation:
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3. |
When a p-n junction is forward biased. The width of depletion layer decreases. |
Answer: Option A
Explanation:
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4. |
In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least? |
A. |
Half wave rectifier | B. |
Full wave rectifier | C. |
Bridge type full wave rectifier | D. |
Three phase full wave rectifier |
Answer: Option D
Explanation:
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5. |
When a p-n Junction is forward biased |
A. |
the current flow is due to electrons only | B. |
the majority carriers in both p and n materials are driven toward the junction. | C. |
the majority carriers in both p and n materials are away from the junction. | D. |
both (a) and (c). |
Answer: Option B
Explanation:
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