Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
1.
At a P-N junction, the potential barrier is due to the charges on either side of the junction, which consists of
2.
In a vacuum triode μ = rpgm.
3.
The material which has zero temperature coefficient of resistance is
4.
When the light falling on a photodiode increases, the reverse minority current
5.
When a ferromagnetic substance is magnetised, small changes in dimensions occur. Such a phenomenon is known as
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