Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
46.
Photoelectric emitters in photo tubes are generally made of
47.
Assertion (A): Power transistors are more commonly of silicon npn type.
Reason (R): The fabrication of silicon npn transistors is easy.
48.
In N-type semiconductor
49.
The addition of n type impurity to intrinsic material creates allowable energy levels.
50.
Which of the following elements act as donor impurities?
- Gold
- Phosphorus
- Boron
- Antimony
- Arsenic
- Indium
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