Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
1.
Which of these has 3 layers?
Answer: Option
Explanation:
p layer, i layer and n layer.
2.
As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by the equation
mv2 = hf - Uwmv2 ≤ hf - Uwmv2 = hf + Uwmv2 ≤ hf + UwAnswer: Option
Explanation:
Some electrons have less energy than Fermi level E and, therefore, more energy than Uw to escape.
Therefore, this equation has inequality sign.
3.
For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10-3A/V2, VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV.
Answer: Option
Explanation:
Drain current Id = k (|Vgs| - |VT|)2
= 0.278 x 10-3(4 - 2)2
= 1.11 mA.
4.
The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same temperature and at 2 MHz, the skin depth would be approximately
Answer: Option
Explanation:
Skin depth = 
5.
When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.
Answer: Option
Explanation:
Both holes and electrons move away from junction.
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