Exercise :: Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
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- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
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- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
1. | Which of these has 3 layers? |
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Answer: Option A Explanation: p layer, i layer and n layer. |
2. | As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by the equation |
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Answer: Option B Explanation: Some electrons have less energy than Fermi level E and, therefore, more energy than Uw to escape. Therefore, this equation has inequality sign. |
3. | For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10-3A/V2, VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV. |
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Answer: Option B Explanation: Drain current Id = k (|Vgs| - |VT|)2 = 0.278 x 10-3(4 - 2)2 = 1.11 mA. |
4. | The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same temperature and at 2 MHz, the skin depth would be approximately |
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Answer: Option A Explanation: Skin depth = |
5. | When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction. |
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Answer: Option B Explanation: Both holes and electrons move away from junction. |