Electronics and Communication Engineering - Electronic Devices and Circuits

1.
In P-N junction, the region containing the uncompensated acceptor and donor ions is called
transition zone
depletion region
neutral region
active region
Answer: Option
Explanation:
No answer description is available. Let's discuss.

2.
In a photodiode the current is due to
majority carriers
minority carriers
both majority and minority carriers
either (a) or (b)
Answer: Option
Explanation:
No answer description is available. Let's discuss.

3.
Consider the following statements
  1. Acceptor level lies close the valence band.
  2. Donor level lies close to the valence band.
  3. n type semiconductor behaves as an insulator at 0 K.
  4. p type semiconductor behaves as an insulator at 0 K.
Of these statements:
2 and 3 are correct
1 and 3 are correct
1 and 4 are correct
3 and 4 are correct
Answer: Option
Explanation:
No answer description is available. Let's discuss.

4.
If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then
the majority carrier density doubles
the minority carrier density doubles
the minority carrier density becomes 4 times the original value
both majority and minority carrier densities double
Answer: Option
Explanation:
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5.

Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.