Electronics and Communication Engineering - Electronic Devices and Circuits

1. 

In P-N junction, the region containing the uncompensated acceptor and donor ions is called

A. transition zone
B. depletion region
C. neutral region
D. active region

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.

2. 

In a photodiode the current is due to

A. majority carriers
B. minority carriers
C. both majority and minority carriers
D. either (a) or (b)

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.

3. 

Consider the following statements

  1. Acceptor level lies close the valence band.
  2. Donor level lies close to the valence band.
  3. n type semiconductor behaves as an insulator at 0 K.
  4. p type semiconductor behaves as an insulator at 0 K.
Of these statements:

A. 2 and 3 are correct
B. 1 and 3 are correct
C. 1 and 4 are correct
D. 3 and 4 are correct

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.

4. 

If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then

A. the majority carrier density doubles
B. the minority carrier density doubles
C. the minority carrier density becomes 4 times the original value
D. both majority and minority carrier densities double

Answer: Option D

Explanation:

No answer description available for this question. Let us discuss.

5. 

Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.

1 2 3 4 5 6 7 8 9 10 Next »