Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise :: Electronic Devices and Circuits - Section 6
| 1. |
In P-N junction, the region containing the uncompensated acceptor and donor ions is called |
| A. |
transition zone | | B. |
depletion region | | C. |
neutral region | | D. |
active region |
Answer: Option B
Explanation:
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| 2. |
In a photodiode the current is due to |
| A. |
majority carriers | | B. |
minority carriers | | C. |
both majority and minority carriers | | D. |
either (a) or (b) |
Answer: Option B
Explanation:
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| 3. |
Consider the following statements - Acceptor level lies close the valence band.
- Donor level lies close to the valence band.
- n type semiconductor behaves as an insulator at 0 K.
- p type semiconductor behaves as an insulator at 0 K.
Of these statements: |
| A. |
2 and 3 are correct | | B. |
1 and 3 are correct | | C. |
1 and 4 are correct | | D. |
3 and 4 are correct |
Answer: Option C
Explanation:
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| 4. |
If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then |
| A. |
the majority carrier density doubles | | B. |
the minority carrier density doubles | | C. |
the minority carrier density becomes 4 times the original value | | D. |
both majority and minority carrier densities double |
Answer: Option D
Explanation:
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| 5. |
Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.
Reason (R): Diffusion of carriers occurs in semiconductors.
|
| A. |
Both A and R are true and R is correct explanation of A | | B. |
Both A and R are true but R is not a correct explanation of A | | C. |
A is true but R is false | | D. |
A is false but R is true |
Answer: Option B
Explanation:
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