Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
1.
In P-N junction, the region containing the uncompensated acceptor and donor ions is called
2.
In a photodiode the current is due to
3.
Consider the following statements
- Acceptor level lies close the valence band.
- Donor level lies close to the valence band.
- n type semiconductor behaves as an insulator at 0 K.
- p type semiconductor behaves as an insulator at 0 K.
4.
If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then
5.
Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.
Reason (R): Diffusion of carriers occurs in semiconductors.
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