Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
6.
The conductivity of materials found in nature ranges from 109 ohm-1m-1 to nearly 1018 ohm-1 m-1 from this it can be concluded that the conductivity of silicon in ohm-1 cm-1 will be nearly
7.
At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called
8.
The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off current (ICB0) as
ICE0 = ICB0
ICE0 = a ICB0
ICE0 = 
ICE0 = 
9.
Which of the following statement about the photo electric emission is incorrect?
10.
In a semiconductor avalanche breakdown occurs when
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