Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise :: Electronic Devices and Circuits - Section 13
1.
A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to
A. increase its IQL B. reduce its I0H C. increase its speed of operation D. reduce power dissipation
Answer: Option C
Explanation:
2.
Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band.
Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.
A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true
Answer: Option A
Explanation:
3.
The drift velocity of electrons and holes is proportional to electric field strength.
Answer: Option A
Explanation:
4.
In an n channel MOSFET, the substrate is connected
A. to negative terminal of battery B. to positive terminal of battery C. to either positive or negative terminal of battery D. none of the above
Answer: Option A
Explanation:
5.
Piezoelectric materials serves as a source of
A. microwaves B. ultrasonic waves C. musical waves D. resonant waves
Answer: Option B
Explanation:
