Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
1.
Lowest resistivity of the following is
2.
Peak inverse voltage will be highest for
3.
In CE configuration, the output characteristics of a bipolar junction transistor is drawn between
4.
Assertion (A): The reverse current in a p-n junction is nearly constant.
Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.
5.
An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity Δσ obeys which relation?
[ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess electron (hole) density ].
[ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess electron (hole) density ].
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