Exercise :: Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
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- Electronic Devices and Circuits - Section 12
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- Electronic Devices and Circuits - Section 16
| 1. | An increase in junction temperature of a semiconductor diode |
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Answer: Option B Explanation: Reverse saturation current doubles for every 10°C rise in junction temperature. |
| 2. | An air gap provided in the iron core of an inductor prevents |
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| 3. | Generally, the gain of a transistor amplifier falls at high frequency due to the |
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| 4. | Which of these has a layer of intrinsic semiconductor? |
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Answer: Option B Explanation: The intrinsic layer is in between p and n layers. |
| 5. | Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded. Reason (R): A high inverse voltage can destroy a p-n junction. |
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Answer: Option A Explanation: PIV is an important parameter in rectifier operation. |