Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
1.
An increase in junction temperature of a semiconductor diode
Answer: Option
Explanation:
Reverse saturation current doubles for every 10°C rise in junction temperature.
2.
An air gap provided in the iron core of an inductor prevents
3.
Generally, the gain of a transistor amplifier falls at high frequency due to the
4.
Which of these has a layer of intrinsic semiconductor?
Answer: Option
Explanation:
The intrinsic layer is in between p and n layers.
5.
Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.
Reason (R): A high inverse voltage can destroy a p-n junction.
Answer: Option
Explanation:
PIV is an important parameter in rectifier operation.
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