Electronics and Communication Engineering - Electronic Devices and Circuits

1. 

An increase in junction temperature of a semiconductor diode

A. causes a small increase in reverse saturation current
B. causes a large increase in reverse saturation current
C. does not affect reverse saturation current
D. may cause an increase or decrease in reverse saturation current depending on rating of diode

Answer: Option B

Explanation:

Reverse saturation current doubles for every 10°C rise in junction temperature.


2. 

An air gap provided in the iron core of an inductor prevents

A. flux leakage
B. hysteresis loss
C. core saturation
D. heat generation

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.

3. 

Generally, the gain of a transistor amplifier falls at high frequency due to the

A. internal capacitance of the device
B. coupling capacitor at the I/P
C. skin effect
D. coupling capacitor at the O/P

Answer: Option A

Explanation:

No answer description available for this question. Let us discuss.

4. 

Which of these has a layer of intrinsic semiconductor?

A. Zener diode
B. PIN diode
C. Photo diode
D. Schottky diode

Answer: Option B

Explanation:

The intrinsic layer is in between p and n layers.


5. 

Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.

Reason (R): A high inverse voltage can destroy a p-n junction.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option A

Explanation:

PIV is an important parameter in rectifier operation.


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