Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
46.
Consider the following statements: The function of oxide layer in an IC device is to
- mask against diffusion or non implant
- insulate the surface electrically
- increase the melting point of silicon
- produce a chemically stable protective layer
Answer: Option
Explanation:
Oxide layer cannot have any effect on melting point of silicon. Moreover before melting silicon breaks down.
47.
An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity atoms. The number of electrons and holes is
Answer: Option
Explanation:
When pentavalent impurity is added, the number of fresh electrons is very large as compared to number of holes.
48.
In a reverse biased p-n junction, the reverse bias is 4V. The junction capacitance is about
49.
Photoconductive devices uses
50.
Assertion (A): Oxide coated cathodes are very commonly used.
Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure tungsten.
Answer: Option
Explanation:
Lower work function leads to higher emission current. Therefore oxide coated cathodes are commonly used.
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