Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
46.
Which of the following is basically a voltage controlled capacitance?
Answer: Option
Explanation:
Therefore, varactor is used for tuning in TV.
47.
When the i-v curve of a photodiode passes through origin the illumination is
Answer: Option
Explanation:
i is plotted on y-axis and v on x-axis. When passing through origin current can be zero only.
48.
An n type silicon bar 0.1 cm long and 100 μm2 in cross-sectional area has a majority carrier concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m0/V-s at 300k. If the charge of an electron is 1.6 x 10-19 coulomb, then the resistance of the bar is
Answer: Option
Explanation:
Resistance of bar(R) =
l = 0.1 cm, A = 100 x 10-6 m2
σ = neμn + Peμp
But bar is of n type then it can be approximated to σ = neμn.
49.
The threshold voltage of a MOSFET can be lowered by
- using thin gate oxide
- reducing the substrate concentration
- increasing the substrate concentration.
Answer: Option
Explanation:
Increasing the substrate concentration lowers threshold voltage. Gate oxide layer has no effect an threshold voltage.
50.
In which device does the extent of light controls the conduction
Answer: Option
Explanation:
The resistance of photosensitive device depends on the light.
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