Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 3 (Q.No. 48)
48.
An n type silicon bar 0.1 cm long and 100 μm2 in cross-sectional area has a majority carrier concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m0/V-s at 300k. If the charge of an electron is 1.6 x 10-19 coulomb, then the resistance of the bar is
Answer: Option
Explanation:
Resistance of bar(R) = 
l = 0.1 cm, A = 100 x 10-6 m2
σ = neμn + Peμp
But bar is of n type then it can be approximated to σ = neμn.
Discussion:
2 comments Page 1 of 1.
Shreya said:
4 years ago
Option A is the correct answer.
100 μm2=100*10^(-6).
Correct answer -100 μm2 = 10^(-10).
100 μm2=100*10^(-6).
Correct answer -100 μm2 = 10^(-10).
Rahul said:
4 years ago
Option A is the correct answer.
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