Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
46.
Fermi level in intrinsic semiconductor is at the centre of forbidden energy band.
47.
In a photo transistor the photocurrent is
48.
In photoelectric emission the maximum kinetic energy of emitted electron is proportional to
49.
In a P-type semiconductor, the conductivity due to holes (= σP) is equal to e = charge of hole, μP = hole mobility, P = hole concentration,
P.e.μP
50.
Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resulting electric field inside the speciment will be in
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