Electronics and Communication Engineering - Electronic Devices and Circuits

41. 

In a p-n-p transistor operating in forward active mode

A. base is positive with respect to emitter and collector
B. base is negative with respect to emitter and collector
C. emitter is positive with respect to base and base is positive with respect to collector
D. emitter is negative with respect to base and base is positive with respect to collector

Answer: Option C

Explanation:

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42. 

Consider the following statements.

  1. Etching
  2. Exposure to UV radiation
  3. Stripping
  4. Developing
After a wafer has been coated with photo resist the correct sequence of these steps in photolithography is

A. 2, 4, 3, 1
B. 2, 4, 1, 3
C. 4, 2, 1, 3
D. 3, 2, 3, 1

Answer: Option C

Explanation:

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43. 

If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the

A. active region
B. saturated region
C. cut off region
D. inverse mode

Answer: Option B

Explanation:

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44. 

In a triode the potential of grid (with respect to cathode) is usually

A. zero
B. negative
C. positive
D. zero or positive

Answer: Option B

Explanation:

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45. 

A varactor diode is

A. reverse biased
B. forward biased
C. biased to breakdown
D. unbiased

Answer: Option A

Explanation:

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