Electronics and Communication Engineering - Electronic Devices and Circuits

41.
In a p-n-p transistor operating in forward active mode
base is positive with respect to emitter and collector
base is negative with respect to emitter and collector
emitter is positive with respect to base and base is positive with respect to collector
emitter is negative with respect to base and base is positive with respect to collector
Answer: Option
Explanation:
No answer description is available. Let's discuss.

42.
Consider the following statements.
  1. Etching
  2. Exposure to UV radiation
  3. Stripping
  4. Developing
After a wafer has been coated with photo resist the correct sequence of these steps in photolithography is
2, 4, 3, 1
2, 4, 1, 3
4, 2, 1, 3
3, 2, 3, 1
Answer: Option
Explanation:
No answer description is available. Let's discuss.

43.
If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the
active region
saturated region
cut off region
inverse mode
Answer: Option
Explanation:
No answer description is available. Let's discuss.

44.
In a triode the potential of grid (with respect to cathode) is usually
zero
negative
positive
zero or positive
Answer: Option
Explanation:
No answer description is available. Let's discuss.

45.
A varactor diode is
reverse biased
forward biased
biased to breakdown
unbiased
Answer: Option
Explanation:
No answer description is available. Let's discuss.