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Electronics and Communication Engineering - Electronic Devices and Circuits

Exercise : Electronic Devices and Circuits - Section 5
36.
In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.
True
False
Answer: Option
Explanation:
No answer description is available. Let's discuss.
37.
A P-N junction offers
high resistance in forward as well as reverse direction
low resistance in forward as well as reverse direction
conducts in forward direction only
conducts in reverse direction only
Answer: Option
Explanation:
No answer description is available. Let's discuss.
38.
In modern MOSFETS, the material used for the gate is
high purity silicon
high purity silica
heavily doped polycrystalline silicon
epitaxial grown silicon
Answer: Option
Explanation:
No answer description is available. Let's discuss.
39.
Consider the following circuit configuration
  1. common Emitter
  2. common Base
  3. emitter follower
  4. emitter follower using Darlington pair.
The correct sequence in increasing order of I/P impedance of these configuration:
2, 1, 4, 3
1, 2, 4, 3
2, 1, 3, 4
1, 2, 3, 4
Answer: Option
Explanation:
No answer description is available. Let's discuss.
40.

Assertion (A): Field emission is substantially independent of temperature.

Reason (R): When a high electric field is created at metal surface field emission may occur.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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