Electronics and Communication Engineering - Electronic Devices and Circuits

36. 

In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.

A. True
B. False

Answer: Option A

Explanation:

No answer description available for this question. Let us discuss.

37. 

A P-N junction offers

A. high resistance in forward as well as reverse direction
B. low resistance in forward as well as reverse direction
C. conducts in forward direction only
D. conducts in reverse direction only

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.

38. 

In modern MOSFETS, the material used for the gate is

A. high purity silicon
B. high purity silica
C. heavily doped polycrystalline silicon
D. epitaxial grown silicon

Answer: Option C

Explanation:

No answer description available for this question. Let us discuss.

39. 

Consider the following circuit configuration

  1. common Emitter
  2. common Base
  3. emitter follower
  4. emitter follower using Darlington pair.
The correct sequence in increasing order of I/P impedance of these configuration:

A. 2, 1, 4, 3
B. 1, 2, 4, 3
C. 2, 1, 3, 4
D. 1, 2, 3, 4

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.

40. 

Assertion (A): Field emission is substantially independent of temperature.

Reason (R): When a high electric field is created at metal surface field emission may occur.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option B

Explanation:

No answer description available for this question. Let us discuss.