Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion

The correct sequence for the given steps in the fabrication of a monolithic bipolar junction transistor (BJT) is as follows:.

Buried layer formation: This step involves creating a buried layer, usually heavily doped, beneath the collector region. It helps in preventing interference between transistors on the same substrate.

Epi-layer formation (Epi-layer refers to the epitaxial layer): An epitaxial layer, which is a thin, single crystal layer grown on the substrate, is formed. This layer will serve as the collector of the transistor.

Base diffusion: The base region is diffused into the epitaxial layer. This involves introducing a specific type of impurity to create either a P-type or N-type semiconductor material, depending on the type of BJT (NPN or PNP). The base region controls the flow of current between the emitter and collector.

Emitter diffusion: The emitter region, heavily doped to enhance conductivity, is diffused into the base region. This step finalizes the basic structure of the bipolar junction transistor.

So, the correct sequence is: 3. Buried layer formation -> 4. Epi-layer formation -> 2. Base diffusion -> 1. Emitter diffusion.

C is the correct answer.

Will anyone explain all the fabrication process?

How it is nonlinear?

The Correct answer is C.

The correct answer is C.

The Correct answer is 'C'.

Will you explain the fabrication process please?