Electronics and Communication Engineering - Electronic Devices and Circuits - Discussion
Discussion Forum : Electronic Devices and Circuits - Section 2 (Q.No. 3)
3.
For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will
Answer: Option
Explanation:
VT depends upon MOSFET construction, hence it will Independent from MOSFET parameters.
Discussion:
7 comments Page 1 of 1.
Rohith said:
3 years ago
Vth depends on;
1. VSB( source to body voltage)
2. Oxide thickness (tox)
3. Doping Concentrations.
Vth is directly proportional to all these 3 factors, so the answer is (d).
1. VSB( source to body voltage)
2. Oxide thickness (tox)
3. Doping Concentrations.
Vth is directly proportional to all these 3 factors, so the answer is (d).
Venstesh said:
6 years ago
Threshold voltage increase due to body effect.
Bhanu said:
6 years ago
Yes, Option D is the correct answer.
Vedant said:
6 years ago
Agree @Manikumar.
The correct answer is (D).
The correct answer is (D).
Manikumar said:
8 years ago
Vt of FET depends on Vsb Vt = Vt0+[sqrt(2Qf+Vsb)-sqrt(2Qf)].
So Vt increases.
So Vt increases.
Neeraj said:
8 years ago
Yes. Threshold voltage depend on the polarization voltage VSB.
Pushpakant yadav said:
9 years ago
Threshold voltage depend on the polarization voltage VSB, for which results the higher values of the threshold voltage for higher value of VSB in comparison with Vt0.
So I think option (D) is right answer.
So I think option (D) is right answer.
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