Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
41.
Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration.
Answer: Option
Explanation:
SICO = (1 + β).
51.
= 42.53
ΔIC = (SICO).ΔICO
= 42.53 x 19.9 nA
= 0.85 μA.
42.
A periodic voltage has following value for equal time intervals changing suddenly from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of the waveform is
Answer: Option
Explanation:
RMS value = 965 = 31.064 Volt.
43.
Work function of oxide coated cathode is much lower than that of tungsten cathode.
Answer: Option
Explanation:
Therefore emission current from oxide coated cathode is more.
44.
The word enhancement mode is associated with
Answer: Option
Explanation:
MOSFET may be depletion mode or enhancement mode.
45.
In which region of a CE bipolar transistor is collector current almost constant?
Answer: Option
Explanation:
It is used as amplifier when it operates in this region.
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