Exercise :: Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
| 36. | Secondary emission is always decremental. |
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Answer: Option B Explanation: Sometimes it can be useful also. |
| 37. | In a degenerate n type semiconductor material, the Fermi level, |
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Answer: Option B Explanation: This is due to high level of doping. |
| 38. | The types of carriers in a semiconductor are |
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Answer: Option B Explanation: Holes and electrons. |
| 39. | A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is |
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Answer: Option B Explanation:
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| 40. | Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C. Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature. |
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Answer: Option A Explanation: At 20°C, 4 nA, at 30°C, 8 nA, at 40°C, 16 nA, at 50°C, 32 nA. |