Exercise :: Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
| 6. | In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then |
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Answer: Option B Explanation: Emitter is p-type in p-n-p transistor. Therefore holes are majority carriers. |
| 7. | In an n channel JFET, the gate is |
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Answer: Option B Explanation: Since channel is n type gate must be p type. |
| 8. | The amount of photoelectric emission current depends on |
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Answer: Option B Explanation: Only the intensity of incident radiation governs the amount of photoelectric emission. |
| 9. | Assertion (A): A p-n junction has high resistance in reverse direction. Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. |
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Answer: Option A Explanation: The increase in reverse resistance is due to widening of depletion layer. |
| 10. | In the circuit of figure the function of resistor R and diode D are |
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Answer: Option C Explanation: Resistance limits current and diode is reverse connected and therefore protects LED against reverse breakdown. |
