Electronics and Communication Engineering - Electronic Devices and Circuits

16. 

The output v-i characteristics of enhancement type MOSFET has

A. only an ohmic region
B. only a saturation region
C. an ohmic region at low voltage value and a saturation region at high voltage
D. a saturation region at low voltage value and an ohmic region at high voltage

Answer: Option C

Explanation:

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17. 

In a full wave rectifier, the current in each of the diodes flows for

A. the complete cycle of the input signal
B. half cycle of the input signal
C. less than half cycle of the input signal
D. one-fourth cycle of the input signal

Answer: Option B

Explanation:

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18. 

In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that

A. E > B > C
B. B > C > E
C. C > E > B
D. C = E = B

Answer: Option A

Explanation:

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19. 

The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly

A. 1 kVA
B. 350 VA
C. 175 VA
D. 108 VA

Answer: Option B

Explanation:

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20. 

When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.

A. True
B. False

Answer: Option A

Explanation:

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