Electronics and Communication Engineering - Electronic Devices and Circuits

11.

The current through a PN Junction diode with v volts applied to the P region to the N region, where (I0 is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is

 A. I0 (e-qv/mkT - 1) B. I0 e-qv/mkT C. I0 (1 - eqv/mkT) D. I0 (eqv/mkT - 1)

Explanation:

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12.

The ratio of diffusion constant for hole DP to the mobility for holes is proportional to

 A. T2 B. T C. 1/T D. T3

Explanation:

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13.

The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300k will be (in m2/s).

 A. 0.43 B. 0.16 C. 0.04 D. 0.01

Explanation:

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14.

During induction heating of metals which of the following is abnormally high?

 A. Frequency B. Voltage C. Current D. Power factor

Explanation:

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15.

Assertion (A): Alkali metals are used as emitters in phototubes.

Reason (R): Alkali metals have low work functions.

 A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true