Electronics and Communication Engineering - Electronic Devices and Circuits

11. 

The current through a PN Junction diode with v volts applied to the P region to the N region, where (I0 is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is

A. I0 (e-qv/mkT - 1)
B. I0 e-qv/mkT
C. I0 (1 - eqv/mkT)
D. I0 (eqv/mkT - 1)

Answer: Option B

Explanation:

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12. 

The ratio of diffusion constant for hole DP to the mobility for holes is proportional to

A. T2
B. T
C. 1/T
D. T3

Answer: Option B

Explanation:

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13. 

The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300k will be (in m2/s).

A. 0.43
B. 0.16
C. 0.04
D. 0.01

Answer: Option B

Explanation:

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14. 

During induction heating of metals which of the following is abnormally high?

A. Frequency
B. Voltage
C. Current
D. Power factor

Answer: Option A

Explanation:

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15. 

Assertion (A): Alkali metals are used as emitters in phototubes.

Reason (R): Alkali metals have low work functions.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option A

Explanation:

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