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Electronics and Communication Engineering - Electronic Devices and Circuits

Exercise : Electronic Devices and Circuits - Section 14
21.
If E is energy level of electron and EF is Fermi level, then
all quantum states with E less than EF will be occupied at T = 0
all quantum states with E less than EF will be empty at T = 0
some quantum states with E less than EF will be occupied at T = 0
none of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
22.
In the equation i = I0 (eV/ηVT - 1), VT =
T x 11600
Answer: Option
Explanation:
No answer description is available. Let's discuss.
23.
The range of life time carriers (electrons and holes) is
1 μs to 100 μs
1 nano sec to 1 μs
1 nano sec to hundreds of μs
none of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
24.
In the forward blocking region of a silicon, controlled rectifier, the SCR is
in the off-state
in the ON state
reverse biased
at the point of breakdown
Answer: Option
Explanation:
No answer description is available. Let's discuss.
25.
Which of the following is a passive component?
Semiconductor devices
Vacuum tube devices
Capacitors
All of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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