Electronics and Communication Engineering - Electronic Devices and Circuits

16.
Greatest mobility can be expected in case of
holes
protons
electrons
negative ions
Answer: Option
Explanation:
No answer description is available. Let's discuss.

17.
An enhancement mode MOSFET is off when the gate voltage is
zero
negative
less than threshold value
none of the above
Answer: Option
Explanation:
No answer description is available. Let's discuss.

18.
When atoms are held together by the sharing of valence electrons
each atom becomes free to move
neutrons start shifting
they form a covalent bond
some of the electrons are lost
Answer: Option
Explanation:
No answer description is available. Let's discuss.

19.
Thermal runaway is not possible in FET, because as the temperature of FET increases.
the mobility decreases
the transconductance increases
impedance of the source
power dissipation in the chip
Answer: Option
Explanation:
No answer description is available. Let's discuss.

20.
Which of the following pairs of semiconductors and current carriers is correctly matched?
Intrinsic : number of electrons = number of holes
P type : number of electrons > number of holes
N type : number of electrons < number of holes
Bulk : neither electrons nor holes
Answer: Option
Explanation:
No answer description is available. Let's discuss.