Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
11.
The I/P impedance (Zi) and the O/P impedance (Zo) of an ideal trans conductance (Voltage controlled current source) amplifier are
12.
The relation between thermionic emission current and temperature is known as
13.
Assertion (A): When forward biased a p-n junction has low resistance.
Reason (R): The ratio is called dynamic resistance.
14.
Assertion (A): JFET is a voltage controlled device.
Reason (R): The drain current can be controlled by controlling VGS.
15.
For a P-N junction diode, the current in reverse bias may be
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