Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
26.
The diameter of an atom is
27.
N-type silicon is obtained by doping silicon with
28.
When a p-n junction is reverse biased
Answer: Option
Explanation:
Holes and electrons move away from junction and therefore resistance increases to a high value.
29.
If a sample of germanium and a sample of Si have the impurity density and are kept at room temperature then
Answer: Option
Explanation:
Since the majority of charge carrier is better in Ge than in Si, for the same concentration of charge carriers, the conductivity of Ge is higher than that of Si.
30.
When a large number of atoms are brought together to form a crystal
Answer: Option
Explanation:
Inner shell electrons are tightly bound to the nucleus. Their energy levels cannot be affected by presence of other atoms.
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