Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
31.
The derating factor for a BJT transistor is about
Answer: Option
Explanation:
For every 1°C rise in ambient temperature the power dissipation must be reduced by 2.5 mW so that transistor is safe.
32.
An intrinsic silicon sample has 2 million free electrons. The number of holes in the sample is
Answer: Option
Explanation:
In intrinsic semiconductor, the number of free electrons is equal to number of holes.
33.
Assertion (A): When reverse voltage across a p-n junction is increased, the junction capacitance decreases.
Reason (R): Capacitance of any layer is inversely proportional to thickness.
Answer: Option
Explanation:
Increase in reverse voltage increases the width of depletion layer and decrease of capacitance of layer.
34.
In an n type semiconductor
Answer: Option
Explanation:
Therefore, in n type semiconductor electrons are majority carriers.
35.
Mobility of electrons and holes are equal.
Answer: Option
Explanation:
Mobility of electrons is more than that of holes.
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