Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
36.
For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about
Answer: Option
Explanation:
350 - 2.5 (60 - 25) ∼ 250 mW.
37.
The concentration of minority carriers in a semiconductor depends mainly on
Answer: Option
Explanation:
Minority carriers are generated due to thermal excitation.
38.
Which of the following has highest conductivity?
Answer: Option
Explanation:
Silver has highest conductivity (and lowest resistivity) in all metals.
39.
In a bipolar junction transistor the base region is made very thin so that
Answer: Option
Explanation:
Since recombination in base region is minimum, I - IE.
40.
Compared to bipolar junction transistor, a JFET has
Answer: Option
Explanation:
JFET is voltage controlled device. Therefore its input impedance is high. But voltage gain is lower than in BJT.
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