Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
21.
The amount of photoelectric emission current depends on the frequency of incident light.
Answer: Option
Explanation:
It depends on intensity of incident light.
22.
When a p-n junction is forward biased
Answer: Option
Explanation:
Forward voltage decreases the width of depletion layer leading to low resistance.
23.
The carriers of n channel JFET are
Answer: Option
Explanation:
In n type semiconductors carriers are electrons.
24.
The depletion layer around p-n junction in JFET consists of
Answer: Option
Explanation:
Depletion layer always has immobile charges.
25.
Junction temperature is always the same as room temperature.
Answer: Option
Explanation:
When the device is being used, junction temperature is higher than room temperature.
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