Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
16.
In which of the following is the width of junction barrier very small?
Answer: Option
Explanation:
Schottky diode has very small depletion layer.
17.
If the reverse voltage across a p-n junction is increased three times, the junction capacitance
Answer: Option
Explanation:
Increase of reverse voltage widens the depletion layer and junction capacitance decreases. However the decrease in capacitance is not proportional to increase in voltage.
18.
Which of these has highly doped p and n region?
Answer: Option
Explanation:
Tunnel diode has heavily doped p and n regions leading to very thin depletion layer.
19.
Measurement of Hall coefficient enables the determination of
Answer: Option
Explanation:
If a potential difference is developed across a current carrying metal strip when the strip is placed in transverse magnetic field.
Hall effect is very weak in metals, but it is large semiconductors.
20.
The units for transconductance are
Answer: Option
Explanation:
Its units are the same as the units of conductance.
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers