Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
11.
The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of
Answer: Option
Explanation:
It is used with reverse bias.
12.
Which of these has degenerate p and n materials?
Answer: Option
Explanation:
Tunnel diode has heavily doped p and n layers called degenerate p and n materials.
13.
A Schottky diode clamp is used along with switching BJT for
Answer: Option
Explanation:
Schottky diode has very low switching time.
14.
From the given circuit below, we can conclude that.
Answer: Option
Explanation:
According to figure, both the LED is glowing, which indicate that circuit is complete in both the half cycle of a.c. signal.
Therefore Emitter and Base junction will act as short circuit in both direction, which indicate transistor is faulty.
15.
In a piezoelectric crystal, applications of a mechanical stress would produce
Answer: Option
Explanation:
In piezoelectric materials mechanical stress produces electric polarization.
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