Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 16
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
31.
For a UJT if
R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2, then the intrinsic stand off ratio (η) is
R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2, then the intrinsic stand off ratio (η) is
32.
The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of the electrons)
∝ 
∝ 
μk
μk2
33.
Intrinsic concentration of charge carriers in a semiconductor varies as
34.
The dynamic resistance of a forward biased p-n diode
35.
A thermistor is a
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