Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 16
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
26.
Maximum rectification efficiency for a half wave rectifier is
27.
For a semiconductor, the conductivity is a function of the products of the number of charge carriers and their mobilites. As result, if the temperature of a slab of intrinsic silicon increases, how does its conductivity vary?
28.
In a junction transistor, the collector cut-off current 'ICB0' reduces considerably by doping the
29.
A Schottky diode clamp is used along with a switching BJT for
30.
The first dominant pole encountered in the frequency response of a compensated op-amp is approximately at
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