Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 16
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
11.
For a NPN bipolar transistor, what is the main stream of current in the base region?
12.
Assertion (A): A VMOS can handle much larger current than other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.
13.
In monolithic ICs, all the components are fabricated by
14.
Which one of the following is not a characteristic of a ferroelectric material?
15.
In case of photo conductor for germanium when forbidden energy gap is 0.72 eV, the critical wavelength for intrinsic excitation will be
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