Electronics and Communication Engineering - Electronic Devices and Circuits

36. 

When P-N junction is in forward bias, by increasing the battery voltage

A. current through P-N junction reduces
B. current through P-N junction increases
C. circuit resistance increases
D. none of the above

Answer: Option B

Explanation:

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37. 

A semiconductor in its purest form called

A. intrinsic semiconductor
B. extrinsic semiconductor
C. P-type semiconductor
D. N-type semiconductor

Answer: Option A

Explanation:

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38. 

Which of the following is an active device?

A. Transformer
B. Silicon controlled rectifier
C. Electric bulb
D. Loudspeaker

Answer: Option B

Explanation:

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39. 

Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current.

Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option B

Explanation:

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40. 

If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.

A. True
B. False

Answer: Option A

Explanation:

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