Electronics and Communication Engineering - Electronic Devices and Circuits

46. 

Assertion (A): Intrinsic semiconductor is an insulator at 0 K.

Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy band.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

Answer: Option A

Explanation:

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47. 

Typical values of h parameters at about 1 mA collector current for small signal audio amplifier in CE configuration are :

A. hie = 100 Ω, hre = 10-1, hfe = 50, hoe = 1 m mho
B. hie = 5 kΩ, hre = 10-4, hfe = 200, hoe = 20 m mho
C. hie = 5 kΩ, hre = 0, hfe = 50, hoe = 2 m mho
D. hie = 100 kΩ, hre = 10-2, hfe = 100, hoe = 10 m mho

Answer: Option B

Explanation:

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48. 

A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of

A. higher cut off frequency
B. higher voltage gain
C. higher current gain
D. lower current drain from the power supply, there by less dissipation

Answer: Option A

Explanation:

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49. 

Dynamic resistance of diode is

A. True
B. False

Answer: Option A

Explanation:

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50. 

The presence of some holes in an intrinsic semiconductor at room temperature is due to

A. valence electrons
B. doping
C. free electrons
D. thermal energy

Answer: Option D

Explanation:

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