Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
46.
Assertion (A): Intrinsic semiconductor is an insulator at 0 K.
Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy band.
47.
Typical values of h parameters at about 1 mA collector current for small signal audio amplifier in CE configuration are :
48.
A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of
49.
Dynamic resistance of diode is 
50.
The presence of some holes in an intrinsic semiconductor at room temperature is due to
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