Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
31.
The electron and hole concentration in a intrinsic semiconductor are ni and Pi respectively when doped with a P type material, these change to n and P, respectively. Then
32.
The energy to cause thermionic emission is supplied by heating the cathode.
33.
Assertion (A): In an n-p-n transistor as the electrons enter the collector region, they are accelerated towards the collector terminal.
Reason (R): Emitter base junction in BJT is forward biased.
34.
Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value.
Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.
35.
The mass of an electron is nearly
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