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Electronics and Communication Engineering - Electronic Devices and Circuits

Exercise : Electronic Devices and Circuits - Section 11
26.
Which of the following material can be used in cable shields?
Copper
Aluminium
Cast iron
Lead
Answer: Option
Explanation:
No answer description is available. Let's discuss.
27.
The charge of an electron is
1.6 x 10-17 coulomb
1.6 x 10-19 coulomb
1.6 x 10-21 coulomb
1.6 x 10-23 coulomb
Answer: Option
Explanation:
No answer description is available. Let's discuss.
28.
The on voltage and forward breakover voltage of an SCR depend on
gate current alone
band gap of semiconductor alone
gate current and semiconductor band gap respectively
semiconductor band gap and gate current respectively
Answer: Option
Explanation:
No answer description is available. Let's discuss.
29.
EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that
the conductivity of silicon will be less than that of germanium at room temperature
the conductivity of silicon will be more than that of germanium at room temperature
the conductivity of two will be same at 60°C
the conductivity of two will be same at 100°C
Answer: Option
Explanation:
No answer description is available. Let's discuss.
30.

Assertion (A): The resistivity of intrinsic semiconductor decreases with increase in temperature.

Reason (R): The forbidden gap decreases with increase in temperature.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:
No answer description is available. Let's discuss.
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