# Electronics and Communication Engineering - Electronic Devices and Circuits

26.

Which of the following material can be used in cable shields?

 A. Copper B. Aluminium C. Cast iron D. Lead

Answer: Option D

Explanation:

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27.

The charge of an electron is

 A. 1.6 x 10-17 coulomb B. 1.6 x 10-19 coulomb C. 1.6 x 10-21 coulomb D. 1.6 x 10-23 coulomb

Answer: Option B

Explanation:

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28.

The on voltage and forward breakover voltage of an SCR depend on

 A. gate current alone B. band gap of semiconductor alone C. gate current and semiconductor band gap respectively D. semiconductor band gap and gate current respectively

Answer: Option D

Explanation:

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29.

EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that

 A. the conductivity of silicon will be less than that of germanium at room temperature B. the conductivity of silicon will be more than that of germanium at room temperature C. the conductivity of two will be same at 60°C D. the conductivity of two will be same at 100°C

Answer: Option A

Explanation:

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30.

Assertion (A): The resistivity of intrinsic semiconductor decreases with increase in temperature.

Reason (R): The forbidden gap decreases with increase in temperature.

 A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true

Answer: Option A

Explanation:

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