Electronics and Communication Engineering - Electronic Devices and Circuits

21. 

In n channel JFET, the gate voltage is made more negative

A. the channel width will increase
B. the channel width will decrease
C. the channel width and drain current will decrease
D. the channel width will decrease and drain current will increase

Answer: Option C

Explanation:

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22. 

Metals approach superconductivity conditions

A. near absolute zero temperature
B. near critical temperature
C. at triple point
D. under the conditions of high temperature and pressure

Answer: Option A

Explanation:

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23. 

The phenomenon known as "Early effect" in a BJT refers to a reduction of the effective base width caused by

A. electron-hole recombination at the base
B. reverse biasing of the base collector junction
C. forward biasing of emitter base junction
D. the early removal of stored base charge during saturation to cut off switching

Answer: Option B

Explanation:

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24. 

At absolute zero temperature a semiconductor behaves like

A. an insulator
B. a super conductor
C. a good conductor
D. a variable resistor

Answer: Option A

Explanation:

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25. 

In a 741 OP-amp, there is 20 dB/decade fall-off starting at a relatively low frequency. This is due to

A. applied load
B. internal compensation
C. impedance of the source
D. power dissipation in the chip

Answer: Option D

Explanation:

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