Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
36.
In a specimen of n type semiconductor, the initial concentration of holes and electrons is pno and nno. When the specimen is subjected to radiation, the hole and electron concentration increase to pn and nn. Then
37.
Which of the following diode is designed to operate in the breakdown region?
38.
Fill in the suitable word in the blanks is the following questions. The electron in the outermost orbit is called __________ electron.
39.
A silicon diode is forward biased and total applied voltage is 5 V. The voltage across p-n junction is
40.
In a triode
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers