Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
26.
Assertion (A): In CE connection of n-p-n transistor. VCE is positive.
Reason (R): In BJT, the base collector junction is reverse biased.
27.
Assertion (A): Tunnel diode is used in many pulse and digital circuits.
Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.
28.
In ferromagnetic materials
29.
Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?
30.
The conductivity of an intrinsic semiconductor is
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