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Electronics and Communication Engineering - Electronic Devices and Circuits

Exercise : Electronic Devices and Circuits - Section 1
26.
Crossover distortion behaviour is characteristic of
class A O/P stage
class B O/P stage
class AB output stage
common pulse O/P state
Answer: Option
Explanation:

It is a characteristics of class B output stage as the amplifier is biased in cut-off region.

In class B amplifier, two transistor are operated in such a way that one is amplify the half cycle and second is amplify -ve half cycle.

27.
If aac for transistor is 0.98 then βac is equal to
51
49
47
45
Answer: Option
Explanation:

.

28.

Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.

Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Answer: Option
Explanation:

A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct but independent.

29.
In an n-p-n transistor biased for operation in forward active region
emitter is positive with respect to base
collector is positive with respect to base
base is positive with respect to emitter and collector is positive with respect to base
none of the above
Answer: Option
Explanation:

In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.

30.
An increase in temperature increases the width of depletion layer.
True
False
Answer: Option
Explanation:

With increase in temperature width of depletion layer decreases.

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