Exercise :: Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
| 26. | Crossover distortion behaviour is characteristic of |
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Answer: Option B Explanation: It is a characteristics of class B output stage as the amplifier is biased in cut-off region. In class B amplifier, two transistor are operated in such a way that one is amplify the half cycle and second is amplify -ve half cycle.
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| 27. | If aac for transistor is 0.98 then βac is equal to |
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Answer: Option B Explanation:
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.| 28. | Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor. Reason (R): The addition of donor impurity creates additional energy levels below conduction band. |
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Answer: Option B Explanation: A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct but independent. |
| 29. | In an n-p-n transistor biased for operation in forward active region |
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Answer: Option C Explanation: In forward active mode emitter base junction is forward biased and base collector junction is reverse biased. |
| 30. | An increase in temperature increases the width of depletion layer. |
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Answer: Option B Explanation: With increase in temperature width of depletion layer decreases. |