Exercise :: Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
| 16. | An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is |
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Answer: Option D Explanation: R = R must be at least 400Ω so that current in LED does not exceed 10 mA. |
= 400Ω.
| 17. | The number of doped regions in PIN diode is |
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Answer: Option B Explanation: A PIN diode has p and n doped regions separated by intrinsic layer. |
| 18. | A transistor has two p-n junctions. The batteries should be connected such that |
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Answer: Option C Explanation: Emitter-base junction is forward biased and base collector junction is reverse biased. |
| 19. | A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately. |
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Answer: Option B Explanation: By increasing of temperature by 10°C, Io become double so by increasing temperature 20°C, Io become 4 time than initial value... and it is 40 PA. |
| 20. | In a bipolar transistor the barrier potential |
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Answer: Option C Explanation: Since there are two p-n junctions, there are two depletion layers and 0.7 V across each layer. |