Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
11.
Pentavalent impurity creates n type semiconductor.
12.
When a BJT is operated under saturated condition
13.
Indium, aluminium, arsenic are all p type impurities.
14.
As the temperature of an intrinsic semiconductor material is increased
15.
Hall coefficient KH and charge density r are related as
KH = 
KH = r
KH = 
KH = (r)1.2
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