Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
36.
For a junction FET in the pinch off region as the drain voltage is increased, the drain current
37.
To avoid thermal runaway in the design of an analog circuit, the operating point of the BJT should be such that it satisfies the condition.
VCE = 
VCC
VCCVCE ≤ VCC
VCCVCE ≥ VCC
VCCVCE ≤ 0.78 VCC
38.
For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when
39.
The primary function of a clamper circuit is to
40.
Breakdown in dielectric may be
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers