Electronics and Communication Engineering - Electronic Devices and Circuits
Exercise : Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 1
- Electronic Devices and Circuits - Section 2
- Electronic Devices and Circuits - Section 3
- Electronic Devices and Circuits - Section 4
- Electronic Devices and Circuits - Section 5
- Electronic Devices and Circuits - Section 6
- Electronic Devices and Circuits - Section 7
- Electronic Devices and Circuits - Section 8
- Electronic Devices and Circuits - Section 9
- Electronic Devices and Circuits - Section 10
- Electronic Devices and Circuits - Section 11
- Electronic Devices and Circuits - Section 12
- Electronic Devices and Circuits - Section 13
- Electronic Devices and Circuits - Section 14
- Electronic Devices and Circuits - Section 15
- Electronic Devices and Circuits - Section 16
11.
What is the function of silicon dioxide layer in MOSFETS?
12.
The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage
13.
Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature.
Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.
14.
Covalent bond energy in Germanium is approximately
15.
Which is correct for a vacuum triode?
Quick links
Quantitative Aptitude
Verbal (English)
Reasoning
Programming
Interview
Placement Papers